Signal conditioning circuitry for silicon pressure sensor

Author

Lee, Moon Key ; Lee, Bo Na ; Lee, Young Jun

Author_Institution

Dept. of Electron. Eng., Yonsei Univ., Seoul, South Korea

fYear

1992

Firstpage

250

Lastpage

253

Abstract

A bipolar integrated silicon pressure sensor with signal conditioning circuitry, including a band-gap reference a differential amplifier, a voltage-to-current converter, and a current-controlled oscillator, is presented. The circuits were designed to suppress the influence of temperature and supply voltage variation. The signal conditioning circuitry can convert input pressure to a square waveform with a temperature coefficient of 67 ppm/°C in the temperature range of 0°C~50°C. This signal conditioning circuitry was fabricated by double-diffused bipolar technology and can be operated at up to 14 psi

Keywords

bipolar integrated circuits; compensation; elemental semiconductors; linear integrated circuits; pressure sensors; signal processing equipment; silicon; 0 to 50 degC; 14 psi; Si; band-gap reference; current-controlled oscillator; differential amplifier; double-diffused bipolar technology; pressure sensor; signal conditioning circuitry; square waveform; supply voltage variation; temperature variation suppression; voltage-to-current converter; Circuits; Operational amplifiers; Photonic band gap; Sensor phenomena and characterization; Silicon; Temperature dependence; Temperature distribution; Temperature sensors; Voltage; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-0727-5

Type

conf

DOI

10.1109/BIPOL.1992.274039

Filename

274039