Low leakage bulk silicon substrate based SDOI FINFETs

This work presents a novel low leakage bulk substrate based SDOI (Source-Drain on Insulator) FINFET structure and a new integration scheme for fabrication thereof. Through simulation, SDOI FINFETs were thoroughly compared to Bulk FINFETs and SOI FINFETs. SDOI FINFETs clearly achieved SOI FINFETs like excellent subthreshold characteristics, low leakage current and low capacitance, while maintained high thermal conduction. By combining the benefits from the SOI FINFET and the Bulk FINFET, the SDOI FINFET shows a great potential to replace the planar MOSFET and to further extend Moore´s law.