A novel sidewall strained-Si channel nMOSFET

We fabricated a novel vertical sidewall strained-Si device without relaxed SiGe buffer layers in this work. The electrical performance has been characterized using C-V and I-V measurement. TEM pictures show a high quality crystalline tensile-strained-Si layer grown on the sidewall of a compressively-strained SiGe layer. The transconductance measurements of sidewall-tensile-strained Si n-MOSFETs exhibit the role of enhanced electron mobility as tensile strain increases. In addition to device results, theoretical sidewall conduction and valence band offset calculations, relative to the strained SiGe layer, are also presented.