• DocumentCode
    1638227
  • Title

    An analytical model for collector currents in gated lateral bipolar transistors

  • Author

    Joardar, Kuntal

  • Author_Institution
    Motorola Inc., Mesa, AZ, USA
  • fYear
    1992
  • Firstpage
    221
  • Lastpage
    224
  • Abstract
    A physically based, analytical model for collector currents in lateral bipolar junction transistors is presented and used to describe the hybrid mode operation of these devices in the presence of a gate electrode over the base region. Results obtained from the analytical model are compared with those of computer simulations. Good agreement has been demonstrated with both numerical simulations and experimental data
  • Keywords
    bipolar transistors; semiconductor device models; analytical model; base region; collector currents; gate electrode; gated lateral bipolar transistors; hybrid mode operation; Analytical models; BiCMOS integrated circuits; Bipolar transistors; Circuit simulation; Computer simulation; Electrodes; MOSFET circuits; Numerical models; Virtual colonoscopy; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992
  • Conference_Location
    Minneapolis, MN
  • Print_ISBN
    0-7803-0727-5
  • Type

    conf

  • DOI
    10.1109/BIPOL.1992.274046
  • Filename
    274046
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1638227