Title :
MESFET process based planar schottky diode and its application to passive power limiters
Author :
Chaturvedi, Sushil ; Saravanan, G. Sai ; Bhat, K. Mahadeva ; Bhalke, Sangam
Author_Institution :
Gallium Arsenide Enabling Technol. Center (GAETEC), Hyderabad, India
Abstract :
Design and development of a planar Schottky diode which is process compatible with general planar MESFET process is described here. The device geometry has been designed and optimized keeping in view the applications up to Ku-band. The device was fabricated and characterized to extract the diode model. Two representative application circuits, viz. two types of microwave power limiters were designed, fabricated and tested to show the versatility of the device.
Keywords :
Schottky diodes; Schottky gate field effect transistors; microwave diodes; microwave transistors; Ku-band; MESFET process; device geometry; passive power limiters; planar Schottky diode; representative application circuits; Detectors; Integrated circuit modeling; MESFETs; Microwave circuits; Schottky diodes; Solid modeling; MESFET; Schottky diode; diode limiter; microwave power limiter; zero bias detector;
Conference_Titel :
Microwave and RF Conference, 2013 IEEE MTT-S International
Conference_Location :
New Delhi
DOI :
10.1109/IMaRC.2013.6777738
