Title :
High-isolation MEMS capacitive shunt switch
Author :
Zhang, Yi ; Onodera, Kazumasa ; Maeda, Ryutaro
Author_Institution :
Adv. Manuf. Res. Inst., Nat. Inst. of Adv. Sci. & Technol., Ibaraki
Abstract :
Many efforts have been made to find materials with high dielectric constant for the application of RF capacitive shunt switch in order to obtain large down-state capacitance and therefore high isolation. In this work, HfO2 dielectric was suggested for the application of RF shunt switch. The HfO2 dielectric prepared in this work had the breakdown field higher than 20 MV/cm. The RF switch using 45-nm-thick HfO2 dielectric showed excellent performance. Its insertion loss is lower than 0.8 dB until 50 GHz at the up-state position. Its isolation is higher than 30 dB until 50 GHz at the down-state, particularly, higher than 50 dB in the range of 10 - 15 GHz
Keywords :
dielectric devices; dielectric materials; electric breakdown; microswitches; microwave switches; permittivity; 10 to 15 GHz; 45 nm; HfO2; MEMS capacitive shunt switch; RF capacitive shunt switch; breakdown field; high dielectric constant; insertion loss is; Capacitance; Dielectric breakdown; Dielectric materials; Hafnium oxide; High-K gate dielectrics; Micromechanical devices; Radio frequency; Sputtering; Switches; Voltage;
Conference_Titel :
Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2005. MAPE 2005. IEEE International Symposium on
Conference_Location :
Beijing
Print_ISBN :
0-7803-9128-4
DOI :
10.1109/MAPE.2005.1617889
