Title :
Improved charge-pumping method for lateral profiling of interface traps and oxide charge in MOSFET devices
Author :
Melik-Martirosian, A. ; Ma, T.P.
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
Abstract :
An improved oxide-charge and interface-trap lateral profiling charge pumping technique is proposed. Erase-induced oxide charge and interface traps are investigated in Flash EPROM devices. It is shown that the improved technique allows the extraction of profiles in cases where the previous method does not yield satisfactory results.
Keywords :
MOSFET; flash memories; hot carriers; interface states; semiconductor device measurement; semiconductor device reliability; MOSFET; charge-pumping method; erase-induced oxide charge; flash EPROM devices; hot carrier effects; interface traps; lateral profiling; oxide charge; profile extraction; reliability; Charge measurement; Charge pumps; Current measurement; Data mining; Differential equations; Flash memory; Hot carriers; MOSFET circuits; Pulse measurements; Stress;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.823854
