• DocumentCode
    1638352
  • Title

    Improved charge-pumping method for lateral profiling of interface traps and oxide charge in MOSFET devices

  • Author

    Melik-Martirosian, A. ; Ma, T.P.

  • Author_Institution
    Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
  • fYear
    1999
  • Firstpage
    93
  • Lastpage
    96
  • Abstract
    An improved oxide-charge and interface-trap lateral profiling charge pumping technique is proposed. Erase-induced oxide charge and interface traps are investigated in Flash EPROM devices. It is shown that the improved technique allows the extraction of profiles in cases where the previous method does not yield satisfactory results.
  • Keywords
    MOSFET; flash memories; hot carriers; interface states; semiconductor device measurement; semiconductor device reliability; MOSFET; charge-pumping method; erase-induced oxide charge; flash EPROM devices; hot carrier effects; interface traps; lateral profiling; oxide charge; profile extraction; reliability; Charge measurement; Charge pumps; Current measurement; Data mining; Differential equations; Flash memory; Hot carriers; MOSFET circuits; Pulse measurements; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
  • Conference_Location
    Washington, DC, USA
  • Print_ISBN
    0-7803-5410-9
  • Type

    conf

  • DOI
    10.1109/IEDM.1999.823854
  • Filename
    823854
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1638352