A method of measuring base and emitter resistances of AlGaAs/GaAs HBTs

Author

Prasad, S.J.

Author_Institution

Tektronix, Beaverton, OR, USA

fYear

1992

Firstpage

204

Lastpage

207

Abstract

The author describes a method of determining the base and emitter resistances of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) at a given bias from the S-parameter measurements at a single frequency. The base resistance values agree closely with the calculated values based on layout and sheet resistance considerations. The emitter resistance values agree with those obtained by the open collector method. The method is simple and elegant and can be applied to other bipolar devices as well. No special structures or additional measurements are required for this method

Keywords

III-V semiconductors; S-parameters; aluminium compounds; electric resistance measurement; gallium arsenide; heterojunction bipolar transistors; semiconductor device testing; AlGaAs-GaAs; S-parameter measurements; base resistance values; bipolar devices; emitter resistance values; heterojunction bipolar transistors; measurement method; Degradation; Electrical resistance measurement; Equivalent circuits; Frequency measurement; Gallium arsenide; Heterojunction bipolar transistors; Inductance measurement; Microwave theory and techniques; Parasitic capacitance; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-0727-5

Type

conf

DOI

10.1109/BIPOL.1992.274050

Filename

274050