DocumentCode
1638504
Title
A new, 0.8 V logic swing, 1.6 V operational high speed BiCMOS circuit
Author
Oguri, Takashi ; Kimura, Tohru
Author_Institution
NEC Corp., Kanagawa, Japan
fYear
1992
Firstpage
187
Lastpage
190
Abstract
The authors present a high-speed, low-power, 0.8-V-logic-swing BiCMOS circuit that operates at 1.6 V. It achieves a 40% reduction in delay time and a 45% improvement in power consumption over CMOS circuits, as well as a 40% reduction in delay time and a 35% improvement in power consumption over BiNMOS circuits. This excellent performance is achieved by an innovative method for quasi-reduction of the bipolar transistor turn-on voltage
Keywords
BiCMOS integrated circuits; integrated logic circuits; 1.6 V; BiCMOS circuit; LV-BiFET; bipolar transistor turn-on voltage; delay time; high speed; low-power; power consumption; turnon voltage-reduction; BiCMOS integrated circuits; Bipolar transistors; CMOS logic circuits; Degradation; Delay effects; Energy consumption; Fabrication; Inverters; Logic circuits; Low voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-0727-5
Type
conf
DOI
10.1109/BIPOL.1992.274054
Filename
274054
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