Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric application

Author

Byoung Hun Lee ; Laegu Kang ; Wen-Jie Qi ; Renee Nieh ; Yongjoo Jeon ; Katsunori Onishi ; Lee, J.C.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

fYear

1999

Firstpage

133

Lastpage

136

Abstract

Physical, electrical and reliability characteristics of ultra thin HfO/sub 2/ as an alternative gate dielectric were studied for the first time. Crucial process parameters of oxygen modulated dc magnetron sputtering were optimized to achieve an equivalent oxide thickness (EOT) of 11.5 /spl Aring/ without deducting the quantum mechanical effect. Leakage current was 3/spl times/10/sup -2/ A/cm/sup 2/ at +1 V. Excellent dielectric properties such as high dielectric constant, low leakage current, good thermal stability, negligible dispersion and good reliability were demonstrated.

Keywords

dielectric thin films; hafnium compounds; leakage currents; permittivity; reliability; semiconductor device metallisation; sputter deposition; thermal stability; 11.5 angstrom; HfO/sub 2/; O/sub 2/; O/sub 2/ modulated dc magnetron sputtering; dielectric constant; dielectric properties; equivalent oxide thickness; gate dielectric; leakage current; low leakage; process parameters; quantum mechanical effect; reliability characteristics; thermal stability; ultrathin HfO/sub 2/; Dielectric materials; Electrodes; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; Magnetic modulators; Quantum mechanics; Silicon; Sputtering;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.823863

Filename

823863