A 15.5 GHz bandwidth Si bipolar preamplifier

Author

Kitahata, Hideki ; Takemura, Hisashi ; Suzaki, Tetsuyuki ; Soda, Masaaki ; Morikawa, T. ; Tezuka, Hiroshi ; Ogawa, Chihiro ; Fujita, Sadao ; Tashiro, Tsutomu

Author_Institution

NEC Corp., Kanagawa, Japan

fYear

1992

Firstpage

155

Lastpage

158

Abstract

The authors describe an extremely high performance Si bipolar preamplifier, which has a 15.5-GHz bandwidth with a transimpedance gain of 52 dBΩ. To achieve such high performance, the optimization of feedback parameters in the circuit and the realization of the 46-GHz f_max (maximum frequency of oscillation) transistor were carried out simultaneously. The circuit consists of gain and buffer stages. Employing a dual-feedback configuration in the gain stage design, the preamplifier has broadband and low-noise characteristics. The measured frequency response of the preamplifier, using the optimized circuit and the improved transistors, is shown

Keywords

MMIC; bipolar integrated circuits; elemental semiconductors; feedback; frequency response; preamplifiers; silicon; wideband amplifiers; 15.5 GHz; 46 GHz; Si bipolar preamplifier; broadband; buffer stages; dual-feedback configuration; feedback parameters; frequency response; gain stage design; low-noise characteristics; Bandwidth; Capacitors; Circuits; Degradation; Fabrication; Feedback; Frequency; National electric code; Preamplifiers; Resistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-0727-5

Type

conf

DOI

10.1109/BIPOL.1992.274061

Filename

274061