Zirconium oxide based gate dielectrics with equivalent oxide thickness of less than 1.0 nm and performance of submicron MOSFET using a nitride gate replacement process

Author

Yanjun Ma ; Yoshi Ono ; Stecker, L. ; Evans, D.R. ; Hsu, S.T.

Author_Institution

Sharp Labs. of America, Camas, WA, USA

fYear

1999

Firstpage

149

Lastpage

152

Abstract

Zirconium oxide is investigated as a possible replacement for SiO/sub 2/ gate dielectric thinner than 1.5 nm. A maximum capacitance of 31 fF//spl mu/m/sup 2/ (measured in accumulation at -2 V) is obtained for a 3.9 nm ZrO/sub 2/ film with leakage current of /spl sim/1 mA/cm/sup 2/ at -1.0 V, yielding an equivalent oxide thickness of less than 1.0 nm. Doping with Al produced amorphous films with better uniformity, but slightly lower dielectric constant. Submicron MOSFETs with TiN gate electrode and ZrO/sub 2/ or Al doped ZrO/sub 2/ gate dielectrics have been fabricated and good device performance is obtained.

Keywords

MOSFET; dielectric thin films; permittivity; zirconium compounds; Al doping; TiN; TiN gate electrode; ZrO/sub 2/; ZrO/sub 2/:Al; capacitance; dielectric constant; equivalent oxide thickness; high-K gate dielectric; leakage current; nitride gate electrode; submicron MOSFET; zirconium oxide amorphous film; Amorphous materials; Capacitance measurement; Current measurement; Dielectric constant; Dielectric measurements; Doping; Leakage current; MOSFETs; Thickness measurement; Zirconium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.823867

Filename

823867