Title :
Accurate thermal noise model for deep-submicron CMOS
Author :
Scholten, A.J. ; Tromp, H.J. ; Tiemeijer, L.F. ; van Langevelde, R. ; Havens, R.J. ; De Vreede, P.W.H. ; Roes, R.F.M. ; Woerlee, P.H. ; Montree, A.H. ; Klaassen, D.B.M.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
Extensive measurements of drain current thermal noise are presented for 3 different CMOS technologies and for gate lengths ranging from 2 /spl mu/m down to 0.17 /spl mu/m. Using a surface-potential-based compact MOS model with improved descriptions of carrier mobility and velocity saturation, all the experimental results can be described accurately without invoking carrier heating effects or introducing additional parameters.
Keywords :
MOSFET; carrier mobility; semiconductor device models; semiconductor device noise; surface potential; thermal noise; 0.17 to 2 micron; MOSFET; carrier mobility; deep-submicron CMOS technology; drain current; surface potential; thermal noise model; velocity saturation; CMOS technology; Circuit noise; Current measurement; Frequency; Low-frequency noise; MOSFETs; Noise figure; Noise measurement; Performance evaluation; Semiconductor device modeling;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.823868
