Title :
A bias dependent body resistance model for deep submicron PDSOI technology
Author :
Bu, Jianhui ; Bi, Jinshun ; Liu, Mengxin ; Cai, Haogang ; Han, Zhengsheng
Author_Institution :
Inst. of Microelectron., Chinese Acad. & Sci., Beijing, China
Abstract :
We report a bias dependent body resistance model for deep submicron PDSOI technology. This model is well verified by the measured data based on the 0.35μm PDSOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS), and can be implemented in the SOI MOSFET compact model like BISMSOI.
Keywords :
CMOS integrated circuits; MOSFET; semiconductor device models; silicon-on-insulator; BISMSOI; Chinese Academy of Sciences; Institute of Microelectronics; SOI MOSFET; bias dependent body resistance model; deep submicron PDSOI technology; size 0.35 mum; Data models; Electrical resistance measurement; Immune system; Logic gates; MOS devices; MOSFET circuits; Voltage measurement;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667708
