DocumentCode
1638799
Title
A large signal non-quasi-static MOS model for RF circuit simulation
Author
Scholten, A.J. ; Tiemeijer, L.F. ; De Vreede, P.W.H. ; Klaassen, D.B.M.
Author_Institution
Philips Res. Lab., Eindhoven, Netherlands
fYear
1999
Firstpage
163
Lastpage
166
Abstract
A large-signal non-quasi-static (NQS) model for RF CMOS circuit simulation is presented that can be built from channel segments described by conventional QS models like BSIM3 or MOS Model 9. This large-signal NQS model is shown to give a very accurate prediction of the high-frequency behaviour of the intrinsic transconductance, the power gain and input resistance.
Keywords
CMOS integrated circuits; MOSFET; UHF integrated circuits; circuit simulation; equivalent circuits; integrated circuit modelling; semiconductor device models; BSIM3; CMOS circuit simulation; HF behaviour prediction; MOS Model 9; RF circuit simulation; high-frequency behaviour; input resistance; intrinsic transconductance; large signal MOS model; nonquasi-static MOS model; power gain; Circuit simulation; Equivalent circuits; Feedback; Impedance; MOS devices; Parasitic capacitance; RF signals; Radio frequency; Semiconductor device modeling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-5410-9
Type
conf
DOI
10.1109/IEDM.1999.823870
Filename
823870
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