Title :
A comprehensive MOSFET mismatch model
Author :
Drennan, P.G. ; McAndrew, C.C.
Author_Institution :
Motorola Inc., Tempe, AZ, USA
Abstract :
This paper presents a new model for MOSFET mismatch, based on physical process parameters and characterization by backward propagation of variance. Experimental data show significantly more accurate modeling of MOSFET mismatch over geometry and bias than previously reported models. The new approach allows identification of the fundamental cause of mismatch, for process diagnosis.
Keywords :
MOSFET; semiconductor device models; MOSFET mismatch model; backward propagation of variance; characterization; parametric yield loss; physical process parameters; process diagnosis; CMOS technology; Circuit optimization; Current measurement; Electrical resistance measurement; Geometry; MOSFET circuits; SPICE; Semiconductor device modeling; Solid modeling; Voltage;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.823871
