Self-heating characterization for SOI MOSFET based on AC output conductance

Author

Wei Jin ; Fung, S.K.H. ; Weidong Liu ; Chan, P.C.H. ; Chenming Hu

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1999

Firstpage

175

Lastpage

178

Abstract

A simple and accurate characterization method for the self-heating effect in SOI MOSFET is reported for the first time. The AC output conductance at one bias point and several frequencies are measured to determine the thermal resistance (R/sub th/) and thermal capacitance (C/sub th/) associated with SOI devices. The proposed methodology is critical for removing the misleadingly large self-heating effect from the DC I-V data in device modeling.

Keywords

MOSFET; electric admittance; semiconductor device measurement; semiconductor device models; silicon-on-insulator; thermal resistance; AC output conductance; DC I-V data; SOI MOSFET; SOI devices; Si; device modeling; self-heating characterization; thermal capacitance; thermal resistance; Admittance; Capacitance measurement; Capacitors; Frequency; MOSFET circuits; Medical simulation; Microelectronics; Temperature; Thermal conductivity; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.823873

Filename

823873

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1638866