Title :
A quick transient response LDO regulator in current control mode
Author :
Ma, Zhuo ; Peng, Wangzhi ; Duan, Zhikui ; Xie, Lunguo ; Guo, Yang ; Chen, Jihua
Author_Institution :
Comput. Sch., Nat. Univ. of Defense Technol., Changsha, China
Abstract :
In this article, an optimized transient performance CCL-LDO is proposed, which adopts the controlling method of the charge pump phase-locked loop. With 1μF decoupling capacitor, the experimental results based on 0.13μm CMOS process show that the output voltage is 1.0V, and when the workload changes from 100μA to 100mA transiently, the stable dropout is 4.25mV, settling time is 8.2μs and undershoot is 5.11mV; when the workload changes from 100mA to 100μA transiently, the stable dropout is 4.25mV, settling time is 23.3μs and overshoot is 6.21mV. Most of the attributes of the CCL-LDO are improved rapidly, the FOM value is 0.0097.
Keywords :
CMOS integrated circuits; charge pump circuits; phase locked loops; transient response; CMOS process; FOM value; LDO regulator; charge pump phase-locked loop; current control mode; quick transient response; Capacitors; Logic gates; Power MOSFET; Transconductance; Transient analysis; Transient response;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667712
