Title :
A novel VLSI process using electron irradiation and laser annealing
Author :
Usenko, Alexander Y.
Author_Institution :
ROTOR, Cherkasy, Ukraine
Abstract :
A semiconductor integrated circuit fabrication technology, called radiplanar, which improves VLSI performance in several respects is described. The radiplanar process includes two process steps which are not used in conventional IC technologies. The first is high-energy, high-flux electron irradiation, and the second is pulsed laser treatment. A semi-insulating substrate is formed by irradiating a standard Si substrate with high-energy electrons to generate point lattice defects. Then only the surface of the irradiated substrate is made semiconductive by laser processing. Semiconductor devices are produced in the semiconductive regions of the substrate formed in this manner
Keywords :
VLSI; electron beam applications; integrated circuit technology; laser beam annealing; IC technologies; Si substrate; VLSI process; electron irradiation; fabrication technology; high-energy electrons; laser annealing; laser processing; point lattice defects; pulsed laser treatment; radiplanar process; semi-insulating substrate; semiconductor integrated circuit; Annealing; Electrons; Integrated circuit technology; Lattices; Optical device fabrication; Optical pulses; Semiconductor lasers; Substrates; Surface treatment; Very large scale integration;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0727-5
DOI :
10.1109/BIPOL.1992.274069
