Title :
A 2D analytical model of bulk-silicon triple RESURF devices
Author :
Hua, Tingting ; Guo, Yufeng ; Sheu, Gene
Author_Institution :
Coll. of Electron. Sci. & Eng., Nanjing Univ. of Posts & Telecommun., Nanjing, China
Abstract :
A 2D analytical model of the bulk-silicon triple RESURF devices is proposed. Based on the 2D Poisson´s solution, the new analytical expressions of the surface potential and electric field distributions are obtained. According to the model and the semiconductor device simulator Medici, the electric field reduction mechanism and breakdown characteristics in the device are discussed. Further, a RESURF doping optimal region for optimizing the drift region concentration is given. All analytical results are well supported by the numerical results obtained by Medici, showing the validity of the model presented here.
Keywords :
electric breakdown; stochastic processes; 2D Poisson solution; 2D analytical model; RESURF doping optimal region; breakdown characteristics; bulk-silicon triple RESURF device; drift region concentration; electric field distribution; electric field reduction mechanism; reduced surface field; semiconductor device simulator Medici; Analytical models; Doping; Electric breakdown; Electric fields; Electric potential; Junctions; Semiconductor process modeling;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667714
