Title :
Current and future development of high power MOS devices
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
The current and future developments of high power MOS devices are investigated, taking progress of the Gate Turn-Off thyristor (GTO) into consideration. As results of the investigations on recent progress and technical issues related to the roadblock to the future MOS device developments, it is shown that an Injection Enhanced IGBT (IEGT) will be a promising candidate for the next generation high power MOS devices which can be replaceable with the GTO, keeping IGBT advantages such as easy gating and ruggedness.
Keywords :
MOS-controlled thyristors; carrier density; insulated gate bipolar transistors; power transistors; GTO thyristor; carrier profiles; gate turn-off thyristor; high power MOS devices; injection enhanced IGBT; Cathodes; Electrons; Insulated gate bipolar transistors; MOS devices; Metalworking machines; Motor drives; Switching frequency; Switching loss; Thyristors; Voltage;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.823875
