Optimization of shallow and deep trench isolation structures for ultra-high-speed bipolar LSIs

Author

Itoh, N. ; Yoshino, C. ; Matsuda, S. ; Tusboi, Y. ; Inou, K. ; Katsumata, Y. ; Iwai, H.

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1992

Firstpage

104

Lastpage

107

Abstract

The authors report on an investigation into the optimization of shallow and deep trench isolation structures for ultra-high-speed bipolar LSIs. Several processes and filling materials were compared in terms of process cost, filling completeness, flatness of the field surface, residual mechanical stress, trench capacitance, etc. Among several candidate fabrication methods, shallow and deep trench isolation structures filled using low-temperature SiO₂ deposition were the most suitable candidate for ultra-high-speed bipolar LSIs

Keywords

bipolar integrated circuits; integrated circuit technology; large scale integration; SiO₂-Si; deep trench isolation structures; field surface flatness; filling completeness; filling materials; low-temperature SiO₂ deposition; process cost; residual mechanical stress; shallow trench isolation; trench capacitance; ultra-high-speed bipolar LSIs; Etching; Fabrication; Filling; Impurities; Large scale integration; Lead compounds; Parasitic capacitance; Stress measurement; Temperature; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-0727-5

Type

conf

DOI

10.1109/BIPOL.1992.274073

Filename

274073