A self-aligned emitter base NiSi electrode technology for advanced high-speed bipolar LSIs

Author

Iinuma, T. ; Itoh, N. ; Inou, K. ; Nakajima, H. ; Matsuda, S. ; Kunishima, I. ; Suguro, K. ; Katsumata, Y. ; Iwai, H.

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1992

Firstpage

92

Lastpage

95

Abstract

The characteristics of double polysilicon self-aligned bipolar transistors with advanced 0.4-μm NiSi salicide base electrodes are reported. Since NiSi/polysilicon contact resistance is lower than that of TiSi₂/polysilicon and the process temperature is lower, the result is a high-performance bipolar device. A very low base resistance of 91 Ω was obtained

Keywords

bipolar integrated circuits; bipolar transistors; contact resistance; elemental semiconductors; integrated circuit technology; large scale integration; metallisation; nickel compounds; semiconductor-metal boundaries; silicon; 0.4 micron; 91 ohm; NiSi electrode technology; NiSi-Si; NiSi/polysilicon contact resistance; bipolar transistors; double polysilicon; high-speed bipolar LSIs; process temperature; self-aligned emitter; self-aligned silicide; Bipolar transistors; Boron; Contact resistance; Electrical resistance measurement; Electrodes; Large scale integration; Silicidation; Silicides; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-0727-5

Type

conf

DOI

10.1109/BIPOL.1992.274076

Filename

274076