Title :
RF LDMOS with extreme low parasitic feedback capacitance and high hot-carrier immunity
Author :
Shuming Xu ; Pangdow Foo ; Jianqing Wen ; Yong Liu ; Fujiang Lin ; Changhong Ren
Author_Institution :
Inst. of Microelectron., Singapore
Abstract :
In this paper, a new RF LDMOS is demonstrated with a cost effective process technology. By combining a step LDD and an inherent thermal oxide spacer, the parasitic feedback capacitance C/sub rss/ is reduced by 40%, achieving a 35% higher output power. Furthermore, the hot-electron resistance is improved by 70%, allowing more power to be obtained with a higher reliability.
Keywords :
UHF field effect transistors; capacitance; feedback; hot carriers; power MOSFET; semiconductor device reliability; RF LDMOS; cost effective process technology; high hot-carrier immunity; hot-electron resistance; lateral DMOSFET; parasitic feedback capacitance reduction; reliability; thermal oxide spacer; Degradation; Doping; Hot carriers; Microelectronics; Output feedback; Parasitic capacitance; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.823879
