RF LDMOS with extreme low parasitic feedback capacitance and high hot-carrier immunity

Author

Shuming Xu ; Pangdow Foo ; Jianqing Wen ; Yong Liu ; Fujiang Lin ; Changhong Ren

Author_Institution

Inst. of Microelectron., Singapore

fYear

1999

Firstpage

201

Lastpage

204

Abstract

In this paper, a new RF LDMOS is demonstrated with a cost effective process technology. By combining a step LDD and an inherent thermal oxide spacer, the parasitic feedback capacitance C/sub rss/ is reduced by 40%, achieving a 35% higher output power. Furthermore, the hot-electron resistance is improved by 70%, allowing more power to be obtained with a higher reliability.

Keywords

UHF field effect transistors; capacitance; feedback; hot carriers; power MOSFET; semiconductor device reliability; RF LDMOS; cost effective process technology; high hot-carrier immunity; hot-electron resistance; lateral DMOSFET; parasitic feedback capacitance reduction; reliability; thermal oxide spacer; Degradation; Doping; Hot carriers; Microelectronics; Output feedback; Parasitic capacitance; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.823879

Filename

823879

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1639033