Title :
AModified GP large-signal model for InGaP/GaAs HBT and direct optimization extraction methodology
Author :
Ying Zhang ; Miao Li ; Yuxia Shi ; Li Zhang ; Yan Wang
Author_Institution :
Dept. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
A new extraction method for InGaP/GaAs HBTs based on direct optimization is proposed. Through modification of conventional GP formulation, the variations of transport saturation current and ideal forward transit time versus biases are incorporated into the compact model. Rather than intense and complicated iterative optimization, this new parameter extraction methodology realized the united optimization for DC and RF performances together for the first time. The new modeling approach is verified by comparing the simulated DC curves as well as S-parameter with the measured data of InGaP/GaAs HBT over wide frequency and bias ranges. The excellent results demonstrate the effectiveness of the modeling methodology for InGaP/GaAs HBTs.
Keywords :
heterojunction bipolar transistors; HBT; InGaP-GaAs; compact model; direct optimization extraction methodology; heterojunction bipolar transistors; ideal forward transit time; iterative optimization; transport saturation current; Frequency measurement; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit modeling; Optimization; Radio frequency; Scattering parameters;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667720