Title : 
Magnetoelectronic devices
         
        
            Author : 
De Boeck, J. ; Borghs, G.
         
        
            Author_Institution : 
IMEC, Leuven, Belgium
         
        
        
        
        
            Abstract : 
Magnetic disk read-heads, magnetic random access memories and spin-dependent transport structures can all be covered by the term magnetoelectronic devices. This review covers spin-dependent transport in magnetic multilayers and aspects of exploitation of this physical property for magnetic nonvolatile memories (MRAM). The imbalance in the density of states for majority spin-carriers versus minority spin carriers in magnetic materials, triggers spintronic materials and device developments. Such devices are characterized by the fascinating interplay of electronic and magnetic properties.
         
        
            Keywords : 
giant magnetoresistance; magnetic film stores; magnetic multilayers; magnetoresistive devices; random-access storage; MRAM; magnetic multilayers; magnetic nonvolatile memories; magnetic random access memories; magnetoelectronic devices; majority spin-carriers; minority spin carriers; spin-dependent transport structures; spintronic materials; Electric resistance; Electrons; Giant magnetoresistance; Magnetic devices; Magnetic films; Magnetic moments; Magnetic semiconductors; Magnetic separation; Magnetoelectronics; Soft magnetic materials;
         
        
        
        
            Conference_Titel : 
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
         
        
            Conference_Location : 
Washington, DC, USA
         
        
            Print_ISBN : 
0-7803-5410-9
         
        
        
            DOI : 
10.1109/IEDM.1999.823882