• DocumentCode
    1639129
  • Title

    Magnetoelectronic devices

  • Author

    De Boeck, J. ; Borghs, G.

  • Author_Institution
    IMEC, Leuven, Belgium
  • fYear
    1999
  • Firstpage
    215
  • Lastpage
    218
  • Abstract
    Magnetic disk read-heads, magnetic random access memories and spin-dependent transport structures can all be covered by the term magnetoelectronic devices. This review covers spin-dependent transport in magnetic multilayers and aspects of exploitation of this physical property for magnetic nonvolatile memories (MRAM). The imbalance in the density of states for majority spin-carriers versus minority spin carriers in magnetic materials, triggers spintronic materials and device developments. Such devices are characterized by the fascinating interplay of electronic and magnetic properties.
  • Keywords
    giant magnetoresistance; magnetic film stores; magnetic multilayers; magnetoresistive devices; random-access storage; MRAM; magnetic multilayers; magnetic nonvolatile memories; magnetic random access memories; magnetoelectronic devices; majority spin-carriers; minority spin carriers; spin-dependent transport structures; spintronic materials; Electric resistance; Electrons; Giant magnetoresistance; Magnetic devices; Magnetic films; Magnetic moments; Magnetic semiconductors; Magnetic separation; Magnetoelectronics; Soft magnetic materials;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
  • Conference_Location
    Washington, DC, USA
  • Print_ISBN
    0-7803-5410-9
  • Type

    conf

  • DOI
    10.1109/IEDM.1999.823882
  • Filename
    823882