Title :
A comparative device and performance analysis between a Si-Ge epitaxial-base HBT and a Si double-poly I/I BJT npn structure
Author :
Pelella, Mario M. ; Nguyen, Phung T. ; Saccamango, Mary Jo ; Ratanaphanyarat, Somnuk ; Comfort, James H. ; Fischer, Stephen E. ; Knepper, Ronald W. ; Peressini, Peter P. ; Chu, Sanford F.
Author_Institution :
Semiconductor R&D Center, IBM, East Fishkill, NY, USA
Abstract :
The device characteristics and performance leverage of a SiGe epitaxial-base heterojunction bipolar transistor (HBT) are compared to those of an advanced Si double-poly ion-implanted (I/I)-base bipolar junction transistor (BJT) npn structure. In addition, a collector-base profile optimization for the SiGe device structure is described. Two-dimensional numerical process and device simulators and a lumped equivalent circuit model generator are used for the comparison along with experimental data. The simulated results show a greater than 3× increase in current gain, a 1.5× increase in the unity-gain cutoff frequency, and a 13% improvement in ECL circuit delay for the SiGe device. The experimental results confirm the device behavior predicted by the simulations
Keywords :
Ge-Si alloys; bipolar transistors; elemental semiconductors; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; silicon; 2D numerical process simulation; BJT npn structure; ECL circuit delay; Si double poly ion-implanted structure; Si-Ge epitaxial-base HBT; SiGe-Si; collector-base profile optimization; current gain; device characteristics; device simulators; heterojunction bipolar transistor; lumped equivalent circuit model generator; performance analysis; unity-gain cutoff frequency; Circuit simulation; Cutoff frequency; Delay; Equivalent circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Performance analysis; Predictive models; Semiconductor process modeling; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0727-5
DOI :
10.1109/BIPOL.1992.274085
