SHBT-a Schottky heterojunction bipolar transistor

Author

Li, Ping ; Li, Yong Q. ; Salama, C. Andre T

Author_Institution

Dept. of Electr. Eng., Toronto Univ., Ont., Canada

fYear

1992

Firstpage

30

Lastpage

33

Abstract

A Schottky heterojunction bipolar transistor (SHBT) is produced and demonstrated. The structure uses a very thin amorphous silicon emitter to reduce the emitter resistance, enhance the current gain, and improve the frequency response. In a comparison between the SHBT and the conventional heterojunction bipolar transistor, the SHBT exhibited improved current gain and current handling capability as well as higher frequency performance. These improvements were associated with the use of the thin emitter

Keywords

Schottky effect; amorphous semiconductors; elemental semiconductors; heterojunction bipolar transistors; silicon; SHBT; Schottky HBT; Schottky heterojunction bipolar transistor; Si-Si:H; current gain; current handling capability; emitter resistance; frequency response; thin amorphous Si emitter; Amorphous silicon; Bipolar transistors; Current density; Electric resistance; Electron emission; Equations; Frequency response; Heterojunction bipolar transistors; Photonic band gap; Schottky barriers;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-0727-5

Type

conf

DOI

10.1109/BIPOL.1992.274088

Filename

274088