Title :
SiGe drift base bipolar technology using Si-GeH4 MBE for sub-40 GHz fMAX operation
Author :
Ugajin, M. ; Kunii, Y. ; Kuwagaki, M. ; Konaka, S.
Author_Institution :
LSI Lab., NTT, Kanagawa, Japan
Abstract :
A 60-nm SiGe hetero-base Si bipolar technology was developed using Si-GeH4 MBE (molecular beam epitaxy). The base resistance was reduced and an fMAX of 37.1 GHz was achieved employing 0.2-μm electron beam lithography for the emitter window and selective WCVD (chemical vapor deposition) for the base electrode. The emitter coupled logic (ECL) gate delay was estimated by a circuit simulator based on the measured device parameters and compared with the measured results for a 0.3-μm HSST transistor with an emitter 5-μm long. This showed that the SiGe base transistor achieves 30% faster ECL gate delay time
Keywords :
Ge-Si alloys; bipolar integrated circuits; electron beam lithography; emitter-coupled logic; integrated circuit technology; integrated logic circuits; molecular beam epitaxial growth; semiconductor materials; silicon; 0.2 micron; 37.1 GHz; 60 nm; ECL gate delay time; MBE; Si-GeH4; SiGe drift base bipolar technology; SiGe hetero-base; SiGe-Si; W; base resistance; chemical vapor deposition; electron beam lithography; emitter coupled logic; molecular beam epitaxy; selective WCVD; Chemical technology; Chemical vapor deposition; Coupling circuits; Delay estimation; Electrodes; Electron beams; Germanium silicon alloys; Lithography; Molecular beam epitaxial growth; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0727-5
DOI :
10.1109/BIPOL.1992.274089
