Microwave performance of InGaAs/InP composite collector bipolar transistors

Author

Feygenson, A. ; Hamm, R.A. ; Smith, Peter ; Montgomery, R.K. ; Ritter, Daniel ; Yadvish, R.D. ; Temkin, H.

Author_Institution

AT&T Bell Lab., Murray Hill, NJ, USA

fYear

1992

Firstpage

23

Lastpage

25

Abstract

A composite collector heterostructure InGaAs/InP bipolar transistor (CCHBT) is described. The collector design assures both the high breakdown voltage, BV_CEO, and the high speed needed for practical IC applications. The microwave performance of the CCHBT is presented. The authors have fabricated and tested monolithic transimpedance amplifiers based on these composite collector transistors. A bandwidth of 28 GHz and a gain of 40 dBΩ were obtained

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; 28 GHz; HBT; IC applications; InGaAs-InP; bipolar transistors; composite collector; high breakdown voltage; microwave performance; monolithic transimpedance amplifiers; Bandwidth; Bipolar transistors; Current density; Current measurement; Doping; Heterojunctions; Indium gallium arsenide; Indium phosphide; Microwave transistors; Scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-0727-5

Type

conf

DOI

10.1109/BIPOL.1992.274090

Filename

274090