Title :
Silicon epitaxial equipment and processing advances for bipolar base technology
Author :
Borland, John O.
Author_Institution :
Applied Mater. Inc., Santa Clara, CA, USA
Abstract :
The author reviews silicon epitaxial equipment and processing advances that have contributed to epitaxial base bipolar technology. He addresses equipment design and surface cleaning requirements for a manufacturable low-temperature epitaxial process. Single-wafer and batch multiwafer equipment designs and processing, as well as possible clustered configurations for improved process capabilities, are discussed
Keywords :
bipolar integrated circuits; elemental semiconductors; integrated circuit manufacture; integrated circuit technology; semiconductor epitaxial layers; semiconductor growth; silicon; surface treatment; vapour phase epitaxial growth; Si processing technology; UHV CVD systems; batch multiwafer equipment; clustered configurations; epitaxial base bipolar technology; epitaxial equipment; manufacturable low-temperature epitaxial process; single wafer equipment; surface cleaning; Atomic layer deposition; Epitaxial growth; Impurities; Molecular beam epitaxial growth; Paper technology; Process design; Silicon; Surface cleaning; Surface contamination; Temperature dependence;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1992., Proceedings of the 1992
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0727-5
DOI :
10.1109/BIPOL.1992.274091
