Title :
A novel W/TiNx metal gate CMOS technology using nitrogen-concentration-controlled TiNx film
Author :
Wakabayashi, H. ; Saito, Y. ; Takeuchi, K. ; Mogami, T. ; Kunio, T.
Author_Institution :
Silicon Syst. Res. Labs., NEC Corp., Sagamihara, Japan
Abstract :
A W/TiN metal gate CMOS technology is newly proposed using a nitrogen-concentration-controlled TiNx film. This is based on a new finding that the threshold voltage of a TiNx gate MOSFET depends on the nitrogen concentration in the TiNx film. The threshold voltage for the W/TiNx gate nMOSFETs is controlled by a low-energy nitrogen ion implantation into the TiN film. This technique using one additional mask is highly compatible with the conventional CMOS process.
Keywords :
CMOS integrated circuits; integrated circuit metallisation; ion implantation; nitrogen; titanium compounds; tungsten; N implanted TiN film; W-TiN; W/TiNx metal gate technology; low-energy N ion implantation; metal gate CMOS technology; nMOSFETs; nitrogen-concentration-controlled TiNx film; CMOS process; CMOS technology; Electrodes; MOSFET circuits; Nitrogen; Semiconductor films; Silicon; Threshold voltage; Tin; Voltage control;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.823891
