Title :
64Mb mobile stacked single-crystal Si SRAM (S3RAM) with selective dual pumping scheme (SDPS) and multi cell burn-in scheme (MCBS) for high density and low power SRAM
Author :
An, Hung-jun ; Nam, Hyou-youn ; Mo, Hyun-sun ; Son, Jong-Pil ; Lim, Bo-tak ; Kang, Sang-beom ; Han, Gong-heum ; Park, Joon-min ; Kim, Kyung-Hee ; Kim, Su-yeon ; Kwak, Choong-Keun ; Byun, Hyun-Geun
Author_Institution :
Memory Div., Samsung Electron. Co. Ltd., Hwasung, South Korea
Abstract :
A 64Mb Mobile S3RAM was designed with stacked single-crystal thin film transistor (SSTFT) cell using 80nm SRAM technology to overcome chip size penalty of conventional 6T-SRAM with improved performance. For 1.3V operation, word line (WL) and cell Vcc were pumped simultaneously using selective dual pumping scheme (SDPS). Access time of 49.2ns was achieved at 1.3V supply voltage. Multi cell burn-in scheme (MCBS) and standby current (ISB1) repair scheme enhanced the yield for the high density products.
Keywords :
CMOS memory circuits; SRAM chips; thin film transistors; 1.3 V; 49.2 ns; 64Mb mobile stacked single-crystal Si SRAM; 80 nm; I.3V operation; chip size penalty; high density; low power SRAM; multi cell burn-in scheme; selective dual pumping scheme; Circuits; Consumer electronics; Costs; Low voltage; Packaging; Random access memory; Read-write memory; Synchronization; Thin film transistors; Wafer scale integration;
Conference_Titel :
VLSI Circuits, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8287-0
DOI :
10.1109/VLSIC.2004.1346588
