A new input switching scheme for a capacitive micro-g accelerometer

Author

Amini, Babak Vakili ; Pourkamali, Siavash ; Zaman, Mohammad ; Ayazi, Farrokh

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2004

Firstpage

310

Lastpage

313

Abstract

The design and implementation of a new input switching capacitive microaccelerometer interface circuit with μg resolution is presented. The accelerometers were fabricated on 50 μm thick silicon-on-insulator (SOI) substrates using a two-mask, dry-release and low temperature process. Fabricated devices were interfaced with a high resolution, low noise and low power switched-capacitor integrated circuit (IC) implemented in a 2.5V 0.25 μm N-well CMOS process with the chip size of 0.5×1.3mm². The measured sensitivity is 0.45V/g and the output noise floor is 4.4μg/√Hz at 150Hz. The total power consumption is 5mW.

Keywords

accelerometers; micromechanical devices; silicon-on-insulator; 0.25 micron; 150 Hz; 2.5 V; 50 micron; SOI; capacitive micro-g accelerometer; input switching scheme; low power switched-capacitor integrated circuit; microaccelerometer; Accelerometers; CMOS integrated circuits; CMOS process; Integrated circuit measurements; Integrated circuit noise; Noise measurement; Semiconductor device measurement; Silicon on insulator technology; Switching circuits; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits, 2004. Digest of Technical Papers. 2004 Symposium on

Print_ISBN

0-7803-8287-0

Type

conf

DOI

10.1109/VLSIC.2004.1346598

Filename

1346598