A novel hybrid-anode AlGaN/GaN field-effect rectifier with low operation voltage

Author

Wang, Zhigang ; Zhang, Bo ; Chen, Wanjun ; Li, Zhaoji

Author_Institution

Sch. of Microelectron. & Solid State Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2010

Firstpage

1889

Lastpage

1891

Abstract

A novel hybrid-anode AlGaN/GaN field-effect rectifier (HA-FER) with low operation voltage has been proposed. The rectifier features a Schottky gate controlled channel between the cathode and anode, by integrating the recessed-Schottky gate and anode Ohmic contact together (hybrid-anode). The turn-on voltage of HA-FER is determined by the threshold voltage of the channel instead of the Schottky barrier, which leads to low operation voltage. As a result, the turn-on voltage of the HA-FER is 0.2 V in comparison with 0.8 V of the conventional Schottky barrier diodes (SBD). The HA-FER shows no degradation in blocking capability.

Keywords

Schottky barriers; Schottky diodes; Schottky gate field effect transistors; field effect devices; rectifiers; Schottky barrier diode; Schottky gate controlled channel; anode Ohmic contact; field effect rectifier; hybrid anode rectifier; low operation voltage; recessed Schottky gate; threshold voltage; turn-on voltage; Aluminum gallium nitride; Anodes; Cathodes; Gallium nitride; Rectifiers; Schottky barriers;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5797-7

Type

conf

DOI

10.1109/ICSICT.2010.5667753

Filename

5667753