DocumentCode
1640167
Title
High temperature and high CMR gate driver circuit for wide-band-gap power semiconductors
Author
Langmaack, N. ; Tareilus, G. ; Henke, M.
Author_Institution
Inst. for Electr. Machines, Traction & Drives, Tech. Univ. Braunschweig, Braunschweig, Germany
fYear
2015
Firstpage
479
Lastpage
483
Abstract
Wide-band-gap semiconductors continuously keep on pushing the limits of power electronic devices to higher switching speeds and higher operating temperatures. The proposed new gate driver circuit is designed consequently to meet the demands of these power semiconductor devices for high common mode rejection and the capability to work at high ambient temperatures.
Keywords
driver circuits; high-temperature electronics; power semiconductor devices; wide band gap semiconductors; high CMR gate driver circuit design; high ambient temperatures; high common mode rejection; power electronic devices; wideband gap power semiconductor device; Circuit faults; Demodulation; Driver circuits; Logic gates; Switches; Topology;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Drive Systems (PEDS), 2015 IEEE 11th International Conference on
Conference_Location
Sydney, NSW
Type
conf
DOI
10.1109/PEDS.2015.7203380
Filename
7203380
Link To Document