DocumentCode :
164038
Title :
Effect of thermal annealing in vacuum on the structural and optical properties of Sb2S3 thin films
Author :
Tigau, N. ; Condurache-Bota, S.
Author_Institution :
Dunarea de Jos Univ. of Galati, Galati, Romania
fYear :
2014
fDate :
13-15 Oct. 2014
Firstpage :
73
Lastpage :
76
Abstract :
In this work, the effect of the thermal annealing on the structural and optical properties of antimony trisulfide (Sb2S3) thin films deposited by thermal evaporation onto glass substrates held at 293 K was studied. Sb2S3 thin films were annealed at 500 K for 1 h in vacuum. Their structural properties have studied by transmission electron microscopy (TEM). The TEM analysis showed that the as-deposited Sb2S3 thin films have been an amorphous structure, while after annealing treatment, they become polycrystalline in structure. The optical constants of Sb2S3 thin films as refractive index, n, and absorption coefficient, α, were obtained from the analysis of the experimental recorded spectral transmission data over the wavelength range of 500-1400 nm. From the photon energy dependence of absorption coefficient, the optical band gap energy, Eg, was calculated for both the as-deposited and annealed Sb2S3 thin films.
Keywords :
absorption coefficients; annealing; antimony compounds; refractive index; semiconductor thin films; transmission electron microscopy; vacuum deposition; Sb2S3; SiO2; TEM; absorption coefficient; antimony trisulfide thin films; glass substrates; optical band gap energy; optical constants; optical properties; photon energy dependence; refractive index; structural properties; temperature 293 K; thermal annealing; thermal evaporation; time 1 h; transmission electron microscopy; Absorption; Annealing; Optical films; Optical refraction; Optical variables control; Photonic band gap; absorption coefficient; antimony trisulfide; optical band gap energy; structural properties; thin films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference (CAS), 2014 International
Conference_Location :
Sinaia
ISSN :
1545-827X
Print_ISBN :
978-1-4799-3916-9
Type :
conf
DOI :
10.1109/SMICND.2014.6966395
Filename :
6966395
Link To Document :
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