A temperature sensor in 0.6 μm CMOS technology

Author

Weng, Ming-Chan ; Wu, Jiin-Chuan

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

116

Lastpage

119

Abstract

A fully integrated CMOS temperature sensor is presented. The design uses parasitic substrate bipolar transistors as a temperature sensor. The temperature and reference signals are first converted into current signals by a voltage-to-current converter and then converted to a digital output by a sigma-delta analog-to-digital converter. Fabricated in a 0.6 μm CMOS process, this circuit occupies an active area of 0.7 mm². In the temperature range from 40 to 130°C, the error is ±1.5°C after one-point calibration

Keywords

CMOS integrated circuits; calibration; sigma-delta modulation; temperature sensors; 0.6 micron; 40 to 130 degC; CMOS technology; active area; current signals; digital output; one-point calibration; parasitic substrate bipolar transistors; reference signals; sigma-delta analog-to-digital converter; temperature sensor; voltage-to-current converter; Analog-digital conversion; Bipolar transistors; CMOS process; CMOS technology; Calibration; Circuits; Delta-sigma modulation; Temperature distribution; Temperature sensors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

ASICs, 1999. AP-ASIC '99. The First IEEE Asia Pacific Conference on

Conference_Location

Seoul

Print_ISBN

0-7803-5705-1

Type

conf

DOI

10.1109/APASIC.1999.824042

Filename

824042