Title :
A new extraction method for source/drain resistance in MOSFETs
Author :
Chang, Yang-Hua ; Liu, Yao-Jen
Author_Institution :
Grad. Sch. of Optoelectron., Nat. Yunlin Univ. of Sci. & Technol., Yunlin, Taiwan
Abstract :
A new procedure to determine source/drain series resistance and effective channel length has been developed for MOSFETs operated in linear region. The gate-bias dependence of source/drain resistance is considered by differential and integration processes. This new-developed procedure has been applied to devices with mask channel lengths of 0.23, 0.2, and 0.185 μm. The parameters extracted with this procedure have been validated by measured I-V characteristics.
Keywords :
MOSFET; differential equations; electric resistance; integration; I-V characteristics; MOSFET; channel length; differential process; extraction method; gate-bias dependence; integration process; size 0.185 mum; size 0.2 mum; size 0.23 mum; source/drain series resistance; Current measurement; Logic gates; MOSFETs; Resistance; Semiconductor device measurement; Threshold voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667774
