• DocumentCode
    1640828
  • Title

    A threshold voltage model for the surrounding-gate MOSFETs

  • Author

    Mei, Guanghui ; Hu, Guangxi ; Li, Peicheng ; Gu, Jinglun ; Liu, Ran ; Tang, Tingao

  • Author_Institution
    Syst. State Key Lab., Fudan Univ., Shanghai, China
  • fYear
    2010
  • Firstpage
    1919
  • Lastpage
    1921
  • Abstract
    The metal-oxide-semiconductor field-effect transistor (MOSFET) with a surrounding-gate (SG) is investigated. Poisson´s Equation (PE) is solved analytically. The analytic expressions for electrical potential and threshold voltage (Vth) are obtained. The results are verified with Sentaurus simulations, good agreement is observed. The Vth model can be used for the integrated circuit designers.
  • Keywords
    MOSFET circuits; Poisson equation; integrated circuit design; integrated circuit modelling; MOSFET; Poisson´s equation; Sentaurus simulations; integrated circuit design; metal-oxide-semiconductor field-effect transistor; surrounding gate; threshold voltage model; Analytical models; Electric potential; Integrated circuit modeling; MOSFETs; Numerical models; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667783
  • Filename
    5667783
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1640828