• DocumentCode
    164105
  • Title

    Temperature behavior of 4H-SIC MOS capacitor used as a gas sensor

  • Author

    Pascu, R. ; Pristavu, G. ; Badila, M. ; Brezeanu, G. ; Draghici, F. ; Craciunoiu, F.

  • Author_Institution
    Univ. Politeh. of Bucharest, Bucharest, Romania
  • fYear
    2014
  • fDate
    13-15 Oct. 2014
  • Firstpage
    185
  • Lastpage
    188
  • Abstract
    Temperature behavior of 4H-SiC MOS capacitor is investigated. A new layout with several active MOS structures is proposed. Measured C-V characteristics show good thermal stability up to 300 C. The main electrical parameters of the MOS structure have been extracted by measurements on wafer and encapsulated samples.
  • Keywords
    MOS capacitors; encapsulation; gas sensors; silicon compounds; temperature sensors; thermal stability; wide band gap semiconductors; 4H-SiC MOS capacitor; C-V characteristics; MOS structure; SiC; electrical parameter; encapsulated sample; gas sensor; temperature behavior; thermal stability; wafer measurement; Capacitance-voltage characteristics; MOS capacitors; Silicon carbide; Temperature; Temperature measurement; Temperature sensors; Threshold voltage; MOS Capacitor; Silicon Carbide; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference (CAS), 2014 International
  • Conference_Location
    Sinaia
  • ISSN
    1545-827X
  • Print_ISBN
    978-1-4799-3916-9
  • Type

    conf

  • DOI
    10.1109/SMICND.2014.6966430
  • Filename
    6966430
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=164105