Title :
High density and low power nonvolatile FeRAM with non-driven plate and selected driven bit-line scheme
Author :
Hirano, Hiroshigc ; Sakagami, Masahiko ; Yamaoka, Kunisato ; Nakakuma, Tetsuji ; Iwanari, Shunichi ; Murakuki, Yasuo ; Miki, Takashi ; Gohou, Yasushi ; Fujii, Eiji
Author_Institution :
Matsushita Electr. Ind. Co. Ltd., Kyoto, Japan
Abstract :
We have successfully developed high density and low power embedded 1Mbit FeRAM. Low operating voltage of 1.5V with ferroelectric capacitor which operates at 0.75V was realized by using technology of (1) non-driven plate scheme with non-refresh operation and (2) selected driven bit-line scheme. The memory core size is reduced down to 53% and the power consumption is reduced to approximately one-fiftieth compared with those of the conventional scheme.
Keywords :
ferroelectric storage; power consumption; random-access storage; 0.75 V; 1 Mbit; ferroelectric capacitor; high density; low operating voltage; low power nonvolatile FeRAM; memory core size; nondriven plate; power consumption; selected driven bit-line scheme; Capacitors; Circuits; Electrodes; Energy consumption; Ferroelectric films; Ferroelectric materials; Low voltage; Nonvolatile memory; Random access memory; Voltage control;
Conference_Titel :
VLSI Circuits, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8287-0
DOI :
10.1109/VLSIC.2004.1346645
