Title :
A voltage-dependent switching-time (VDST) model of ferroelectric capacitors for low-voltage FeRAM circuits
Author :
Chow, Jeffery ; Sheikholeslami, Ali ; Cross, Jeffrey S. ; Masui, Shoichi
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
Abstract :
The time required to switch a ferroelectric capacitor from one binary state to the other is strongly related to the magnitude of the applied voltage, especially at voltages well below the power supply. This paper presents a Verilog-A model that accurately predicts the voltage-dependent switching dynamics of various FeRAM technologies. Spectre simulations of low-voltage FeRAM circuits implemented in a 0.35 μm CMOS/PZT testchip are in full agreement with our measurement results.
Keywords :
CMOS memory circuits; ferroelectric capacitors; ferroelectric storage; ferroelectric switching; lead compounds; 0.35 μm CMOS/PZT testchip; 0.35 micron; PZT; PbZrO3TiO3; Verilog-A model; applied voltage; ferroelectric capacitors; low-voltage FeRAM circuits; voltage-dependent switching dynamics; voltage-dependent switching-time model; Circuit testing; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Power supplies; Random access memory; Switched capacitor circuits; Switches; Switching circuits; Voltage;
Conference_Titel :
VLSI Circuits, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8287-0
DOI :
10.1109/VLSIC.2004.1346646
