Title :
A 16Mb MRAM featuring bootstrapped write drivers
Author :
DeBrosse, J. ; Arndt, C. ; Barwin, C. ; Bette, A. ; Gogl, D. ; Gow, E. ; Hoenigschmid, H. ; Lammers, S. ; Lamorey, M. ; Lu, Y. ; Maffitt, T. ; Maloney, K. ; Obermeyer, W. ; Sturm, A. ; Viehmann, H. ; Willmott, D. ; Wood, M. ; Gallagher, W.J. ; Mueller, G.
Author_Institution :
IBM Microeletronics Div., Essex Junction, VT, USA
Abstract :
A 16Mb Magnetic Random Access Memory (MRAM) is demonstrated in 0.18 μm three-Cu-level CMOS with a three-level MRAM process adder. The chip, the highest density MRAM reported to date, utilizes a 1.42 μm2 1-Transistor 1-Magnetic Tunnel Junction (1T1MTJ) cell, measures 79mm2 and features a ×16 asynchronous SRAM-like interface. The paper describes the cell, architecture, and circuit techniques unique to multi-Mb MRAM design, including a novel bootstrapped write driver circuit. Hardware results are presented.
Keywords :
CMOS memory circuits; bootstrap circuits; magnetic tunnelling; random-access storage; 0.18 μm three-Cu-level CMOS; 0.18 micron; 16 Mbit; 16Mb MRAM; Magnetic Random Access Memory; bootstrapped write drivers; magnetic tunnel junction; Adders; CMOS process; CMOS technology; Density measurement; Driver circuits; Magnetic tunneling; Microelectronics; Random access memory; Rivers; Semiconductor device measurement;
Conference_Titel :
VLSI Circuits, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8287-0
DOI :
10.1109/VLSIC.2004.1346648
