DocumentCode
1641157
Title
Improved mobility model of MOSFETs for device simulation
Author
Qingqing, Wu ; Jing, Chen ; Xi, Wang
Author_Institution
Shanghai Inst. of Microsyst. & Inf. Technol., CAS, Shanghai, China
fYear
2010
Firstpage
1934
Lastpage
1936
Abstract
An improved mobility model for device simulation is presented. The model is based on charge density instead of effective surface electric field. Compared to the other models, it accounts for substrate bias effect and channel length dependence.
Keywords
MOSFET; carrier density; carrier mobility; semiconductor device models; substrates; MOSFET; channel length dependence; charge density; device simulation; effective surface electric field; mobility model; substrate bias effect; Doping; Equations; MOSFETs; Mathematical model; Scattering; Semiconductor process modeling; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-5797-7
Type
conf
DOI
10.1109/ICSICT.2010.5667798
Filename
5667798
Link To Document