Title :
Improved mobility model of MOSFETs for device simulation
Author :
Qingqing, Wu ; Jing, Chen ; Xi, Wang
Author_Institution :
Shanghai Inst. of Microsyst. & Inf. Technol., CAS, Shanghai, China
Abstract :
An improved mobility model for device simulation is presented. The model is based on charge density instead of effective surface electric field. Compared to the other models, it accounts for substrate bias effect and channel length dependence.
Keywords :
MOSFET; carrier density; carrier mobility; semiconductor device models; substrates; MOSFET; channel length dependence; charge density; device simulation; effective surface electric field; mobility model; substrate bias effect; Doping; Equations; MOSFETs; Mathematical model; Scattering; Semiconductor process modeling; Substrates;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667798
