• DocumentCode
    1641249
  • Title

    On dynamic behavior of triangular shaped cantilevers in MEMS sensors: Effect of curvature

  • Author

    Zhang, Gui-Ming ; Zhao, Li-Bo ; Huang, En-Ze ; Yuan, Guo-Ying ; Li, Yong ; Liu, Zhi-Gang ; Jiang, Zhuang-De

  • Author_Institution
    State Key Lab. for Manuf. Syst. Eng., Xi´´an Jiaotong Univ., Xi´´an, China
  • fYear
    2010
  • Firstpage
    1937
  • Lastpage
    1939
  • Abstract
    A study on the effect of curvature of triangular shaped cantilevers in MEMS sensors was presented. 3-D models were performed by using the SolidWorks software. And modal analysis and harmonic response analysis were carried out on different types of geometrically configured triangular shaped cantilevers using ANSYS software. The results included the variation of natural frequencies of cantilevers and maximum equivalent von mises strain on the cantilevers with respect to radius of curvature of triangular shaped cantilevers. According to the finite element analysis results, the curvature did affect dynamic behavior of triangular shaped cantilevers in MEMS sensors. Usually, the curvature is induced by the surface stress due to microprocessing or any change of temperature, etc. Therefore, in order to achieve a steady state of strain for the MEMS sensors, it´s better to eliminate the surface stress and make the cantilever transform from a curved cantilever to a straight cantilever.
  • Keywords
    cantilevers; computational geometry; computerised instrumentation; finite element analysis; microsensors; solid modelling; 3D model; ANSYS software; MEMS sensor; SolidWorks software; curvature effect; curved cantilever; dynamic behavior; finite element analysis; harmonic response analysis; modal analysis; straight cantilever; surface stress; triangular shaped cantilever; Finite element methods; Harmonic analysis; Micromechanical devices; Sensors; Software; Strain; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667801
  • Filename
    5667801