Title :
The microwave performances of SiGe/Si HBT based on the high resistivity substrate
Author :
Yang, Weiming ; Shi, Chen ; Gao, Mingjie ; Li, Zhenguo ; Chen, Jianxin
Author_Institution :
Beijing Optoelectronics Technol. Lab, Beijing Univ. of Technol.
Abstract :
The sample of SiGe HBT based on the high resistivity substrate of 1000 Omega-cm was fabricated in a 3 mum manufacture process line. After the structure and fabrication procedure of the device were introduced, the influence of the substrate on the microwave performances was analyzed basing on its high frequency equivalent circuit model. Then the fT, fmax and the minimum noise figure of the sample were tested and compared to the one based on the conventional N + substrate. The results indicate that the fT and the fmax of the former are 4 GHz and 2 GHz larger than that of the latter respectively. In the meantime, the minimum noise figures have almost not been deteriorated
Keywords :
Ge-Si alloys; equivalent circuits; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor materials; silicon; HBT; SiGe; SiGe-Si; frequency equivalent circuit model; microwave performances; Conductivity; Fabrication; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Manufacturing processes; Microwave devices; Noise figure; Performance analysis; Silicon germanium;
Conference_Titel :
Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, 2005. MAPE 2005. IEEE International Symposium on
Conference_Location :
Beijing
Print_ISBN :
0-7803-9128-4
DOI :
10.1109/MAPE.2005.1617995
