Title :
Modeling low frequency noise in PDSOI MOSFETs for analog and RF applications
Author :
Sirohi, S. ; Khandelwal, S.
Author_Institution :
Semicond. R&D Center, IBM, Bangalore, India
Abstract :
In this paper we present the modeling of low frequency in 0.18um PDSOI technology. The two main noise sources, 1/f and excess noise due to shot noise have been discussed. It has been shown that accurate modeling of the body voltage, impact ionization, diode currents and 1/f noise characteristics is essential to incorporate the correct bias and frequency dependence of this excess noise component. Model to hardware correlation for body-contacted and floating body device is also shown to match well with the industry standard BSIMSOI 4.3 model.
Keywords :
MOSFET; analogue integrated circuits; radiofrequency integrated circuits; silicon-on-insulator; 1-f noise characteristics; PDSOI MOSFET; body voltage; body-contacted device; diode currents; floating body device; impact ionization; industry standard BSIMSOI 4.3 model; low frequency noise modeling; silicon-on-insulator technology; size 0.18 mum; 1f noise; Current measurement; Data models; Impact ionization; Low-frequency noise; Radio frequency;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667804
