A low-noise saturation-stacked bandgap reference for image sensor applications

Author

Subbiah, I. ; Suss, A. ; Kravchenko, A. ; Hosticka, B. ; Krautschneider, W.

fYear

2014

fDate

13-15 Oct. 2014

Firstpage

247

Lastpage

250

Abstract

A novel architecture for a bandgap voltage reference is presented in this paper. The voltage reference, designed for image sensor applications, is primarily targeted for a low-noise operation along with other practical constraints such as high power supply rejection, temperature immunity and short start-up time. The analysis and operation of the circuit is discussed and the trade-offs involved in the implementation aspects are examined. The measurement results of the fabricated circuit in a 0.35-μm CMOS process show a noise voltage level of 450 nV/√Hz at 10 Hz, a temperature coefficient of 14 ppm/K and a PSRR of 52 dB.

Keywords

CMOS image sensors; integrated circuit design; integrated circuit noise; radiofrequency integrated circuits; reference circuits; CMOS process; frequency 10 Hz; image sensor application; low-noise saturation-stacked bandgap voltage reference; noise figure 52 dB; power supply rejection; short start-up time; size 0.35 mum; temperature immunity; Image sensors; Logic gates; Noise; Photonic band gap; Temperature dependence; Temperature measurement; Transistors; image sensors; low-noise; saturation-stacked;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2014 International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4799-3916-9

Type

conf

DOI

10.1109/SMICND.2014.6966450

Filename

6966450