DocumentCode
1641515
Title
Band structure calculation of wide bandgap p-type semiconductor material BaCuTeF
Author
Zakutayev, Andriy
Author_Institution
Dept. of Phys., Oregon State Univ., Corvallis, OR, USA
fYear
2008
Firstpage
121
Lastpage
123
Abstract
In this paper the results of the band structure calculation of BaCuTeF are presented. This material has a direct gap. The physical properties of it are defined by the Cu-Te sheets in its layered crystal structure. BaCuTeF is a promising candidate for the various optoelectronics applications.
Keywords
crystal structure; electronic density of states; energy gap; optoelectronic devices; wide band gap semiconductors; BaCuTeF; band structure calculation; direct gap; layered crystal structure; optoelectronics applications; wide bandgap p-type semiconductor material; BaCuTeF; band structure calculation; layered chalcogenides-fluorides; wide bandgap p-type semiconductor;
fLanguage
English
Publisher
ieee
Conference_Titel
Modern Problems of Radio Engineering, Telecommunications and Computer Science, 2008 Proceedings of International Conference on
Conference_Location
Lviv-Slavsko
Print_ISBN
978-966-553-678-9
Type
conf
Filename
5423595
Link To Document